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ESD3V3U4ULC
Characteristics
Table 4
RF Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Line capacitance
1)
C L
–
0.4
0.65
pF
V R = 0 V, f = 1 MHz,
I/O to GND
–
0.2
0.35
pF
V R = 0 V, f = 1 MHz,
I/O to I/O
Channel capacitance
? C i/o-GND –
0.035
–
pF
V R = 0 V, f = 1 MHz,
matching between
I/O to GND
I/O to GND
Channel capacitance
? C i/o-i/o
–
0.017
–
pF
V R = 0 V, f = 1 MHz,
matching between
I/O to I/O
1) Total capacitance line to ground
I/O to I/O
Table 5
ESD Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Note /
Test Condition
Clamping voltage [2]
1)
V CL
–
8
–
V
I PP = 16 A,
from I/O to GND
–
11
–
V
I PP = 30 A,
from I/O to GND
Forward clamping
voltage 1) [2]
V FC
–
–
6
9
–
–
V
V
I PP = 16 A,
from GND to I/O
I PP = 30 A,
from GND to I/O
Dynamic resistance 1) [2]
R DYN
–
–
0.19
0.23
–
–
Ω
Ω
I/O to GND
GND to I/O
1) Please refer to Application Note AN210. TLP parameter: Z 0 = 50 Ω , t p = 100ns, t r = 300ps, averaging window: t 1 = 30 ns
to t 2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistic between I PP1 = 10 A and
I PP2 = 40 A.
Final Data Sheet
6
Rev. 1.2, 2012-07-03
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